4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade8 inch diameter Silicon Carbide (SiC) Wafers Specifications Grade Zero MPD Grade Dummy Grade Diameter 199. 5 200 mm Thickness 500 um + 25 um 350 um + 25 um Wafer Orientation Off axis: 4. 0 deg toward <11 20> + 0. 5 deg Micropipe Density (MPD) <0. 5 cm 2 <30 cm 2 TTV Bow Warp <10um 35um <70um <15um 50um <100um Electrical Resistivity (Ohm cm) 0. 015~0. 028 Notch {10 10} + 5. 0 deg Edge exclusion 3 mm Surface Roughness Optical Polish Ra 1 nm CMP Ra 0. 5